UT-PRC
10100 Burnet Road, Bldg 160
Mail Code R9950
Austin, TX 78758		 phone: 512-471-9669
fax: 512-471-5625
email: jcc@mail.utexas.edu
From 1974 to 1976 he was employed by Texas Instruments where he worked on integrated optics. In 1976 he joined the staff of AT&T Bell Laboratories in Holmdel, NJ, where he worked on a variety of optoelectronic devices, including semiconductor lasers, optical modulators, waveguide switches, photonic integrated circuits, and photodetectors with emphasis on high speed avalanche photodiodes for high-bit-rate lightwave systems. In 1989 he joined the faculty of the University of Texas at Austin as Professor of Electrical and Computer Engineering. He also serves as a Cockrell Family Regents Chair in Engineering. Professor Campbell’s research has focused on Si-based optoelectronics, high-speed, low-noise avalanche photodiodes, GaN ultraviolet photodetectors, and quantum-dot IR imaging.
B.S. Degree in Physics, University of Texas, Austin, Texas, 1969
M.S. Degree in Physics, University of Illinois, Urbana, Illinois, 1971
Ph.D. Degree in Physics, University of Illinois, Urbana, Illinois, 1973
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  • National Academy of Engineering (2002)
  • IEEE/LEOS William Streifer Scientific Achievement Award (2001)
  • IEEE Millennium Medal (2000)
  • Fellow of Optical Society of America (1998)
  • Fellow Member of IEEE (1990)
  • AT&T Bell Laboratories Distinguished Member of Technical Staff (1985)
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  • Low Noise Avalanche Photodiodes (with Archie Holmes)
    The largest research effort in Professor Campbell’s group is devoted to the development of high-speed, low-noise avalanche photodiodes. Ultra low noise and record high gain bandwidth products have been achieved by utilizing new materials in the multiplication region and impact ionization engineering with beneficially designed heterostructures. Recently, this work has been extended to focal plane arrays for three-dimensional applications.
  • Solar-Blind Ultra Violet Photodiodes (with Russell D. Dupuis)
    Sensing and imaging in the visible and infrared (IR) portion of the spectrum are mature and cost-effective technologies. Recently, the ultraviolet (UV) portion of the spectrum detection has developed rapidly owing to the success of wide bandgap materials GaN/AlGaN and the potential for military and commercial application. This research program is devoted to the development of high-performance, ultra-violet, solar-blind AlGaN/GaN photodetectors. To date, metal-semiconductor-metal, PIN, and avalanche photodiodes have been demonstrated. The PIN photodiodes have achieved detectivities comparable to photocathodes and have been successfully integrated into 256x256 arrays. Future research will focus on developing solar-blind photodetectors with internal gain for biological and chemical sensing applications.
  • High Saturation Current and High Linearity in Photodetectors (with Archie Holmes)
    The goal of this program is to develop photodetectors that achieve levels of linearity and saturation currents that exceed the performance of current photodetectors. The development of these high current and high linearity photodetectors will make possible several key advances in microwave photonics.
  • Si-based Integrated Optical Receivers
    Monolithic silicon-based optical receivers are an attractive option for low-cost, high-volume applications where silicon BJT or MOSFET circuits, together with inexpensive short-wavelength light sources and multimode fiber, can provide an optical solution for local area networks (LAN), fiber-to-the home, and optical interconnects. Using the Motorola 130nm CMOS process flow (unmodified) on 2mm-thick SOI substrates Professor Campbell’s group has demonstrated integrated optical receivers that operate to 8Gb/s. At present, this work is being extended to integrate Ge photodiodes into the receiver to enable operation at telecommunication wavelengths.
  • Quantum Dot Photodetectors (with Anupam Madhukar at the University of Southern California)
    As a potential candidate for mid-infrared (3~5 mm) and far-infrared (8~14 mm) photon detection, the quantum dot infrared photodetector (QDIP) has been the subject of extensive research efforts in recent years. This type of photodetector provides the performance advantages of quantum well infrared photodetectors (QWIPs) and can operate at normal incidence, unlike QWIPs. Using various structures, Campbell’s group has demonstrated two color operation and detectivities as high as 1010 cmHz1/2W-1 in the IR.
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  • G. S. Kinsey, J. C. Campbell, and A. G. Dentai, “Waveguide avalanche photodiode operating at 1.5 mm with a gain-bandwidth product of 320 GHz,” IEEE Photon. Tech. Lett., vol. 13, pp. 842-844 (2001).
  • Collins, C.J.; Chowdhury, U.; Wong, M.M.; Yang, B.; Beck, A.L.; Dupuis, R.D.; Campbell, J.C., “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett., vol. 80, pp. 3754-3756 (2002).
  • Csutak, S.M.; Schaub, J.D.; Wu, W.E.; Campbell, J.C, “High-speed monolithically integrated silicon optical receiver fabricated in 130-nm CMOS technology,” IEEE Photonics Technology Letters, vol. 14, pp. 516-517 (2002).
  • Z. H. Chen, O. Baklenov, E. T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z. Ye, and J. C. Campbell, “Normal incidence InAs/AlxGa1-xAs quantum dot infrared photodetectors with undoped active region,” J. Appl. Phys., vol. 89, pp. 4558-4563 (2001).
  • Wang, R. Sidhu, X. G. Zheng, X. Li, Sun, A. L. Holmes, Jr., and J. C. Campbell, “Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region,” IEEE Photon. Tech. Lett., vol. 13, p. 1346 (2001)
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Ariane Beck Xiangyi Guo Gauri Karve Ning Li
Xiaowei Li Zhihong Huang Jungwoo Oh
Ning Duan Xiaofeng Zhang Xiaoguang Zheng
EE383P: Optoelectronic Devices
EE348: Lasers and Optics Engineering
EE379K: Introduction to Fiber Optics
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Last modified: March 5, 2004.
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