UT-PRC
10100 Burnet Road, Bldg 160
Mail Code R9900
Austin, TX 78758		 phone: 512-232-2735
512-471-6903
fax: 512-471-8575
email: holmes@mail.utexas.edu
www.ece.utexas.edu/~holmes
Archie L. Holmes, Jr. joined the faculty in the Electrical and Computer Engineering Department of the University of Texas at Austin in 1997. His main research focus is in the crystal growth of novel III-V semiconductors by molecular beam epitaxy (MBE). These semiconductors include GaInAsN/GaAs, GaInAsN/InP, GaAsSb/GaAs, and AlGaInAsSb/InP. Other research areas include growth and characterization of self-assembled quantum dots; direct wafer bonding for optoelectronic devices and circuits; and the design and fabrication of optoelectronics devices, especially photodiodes.
BSEE with highest honors, The University of Texas at Austin, 1991
MSEE, University of California at Santa Barbara, 1992
Ph.D., University of California at Santa Barbara, 1997
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Engineering Foundation Young Faculty Award, Summer 2000
Faculty Appreciation Award from Student Engineering Council, Fall 1999
Eastman Faculty Teaching Excellence Award, 1998
National Defense Science and Engineering Graduate Fellowship Recipient, 1991-1994
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  • 3D Imaging (joint with Joe Campbell), DARPA, $624,000, 11/00 – 10/03
  • Mid-infrared Optoelectronics, TX Higher Education Coordinating Board, $169,000, Jan 2000 - Dec. 2003
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  • David W. Gotthold, Sridhar Govindaraju, Terry Mattord, Archie L. Holmes, Jr., and Ben G. Streetman “Growth of GaNAs by molecular beam epitaxy using a N2/Ar RF Plasma”, Journal of Vacuum Science and Technology A 18(2), 461 (2000)
  • G.S. Kinsey, D.W. Gotthold, A.L. Holmes, Jr., and J.C. Campbell, “GaNAs resonant-cavity avalanche photodiode operating at 1.064 mm”, Applied Physics Letters 77(10), 1543 (2000)
  • H. Htoon, D. Kulik, O. Baklenov, A.L. Holmes, Jr., T. Takagahara, and C.K. Shih, “Carrier relaxation and quantum dechoerence of excited states in self-assembled quantum dots”, Physical Review B 63,241303(R), (2001)
  • X. Sun, J. Hsu, X.G. Zheng, J.C. Campbell, and A.L. Holmes, Jr., “GaAsSb resonant-cavity-enhanced photodetector operating at 1.3 mm”, IEEE Photonics Technology Letters 14(5), 681 (2002)
  • Sridhar Govindaraju and Archie L. Holmes, Jr., “Growth and characterization of Ga0.8In0.2(N)As quantum wells with GaNxAs1-x (x £ 0.05) barriers by plasma-assisted molecular beam epitaxy”, Journal of Vacuum Science and Technology B 20(3), 1167 (2002)
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Jeffrey Hurst Katie Lipson Michael Oye Rubin Sidhu
EE 339 EE 302 EE 396K
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Last modified: February 25, 2004.
© Microelectronic Research Center, UT-Austin
College of Electrical & Computer Engineering – The University of Texas at Austin
Please send comments or questions to Jean Toll.