MRC Compound Semiconductor Resources

Fabrication:

• Photolithography (Karl Süss MJB-3UV deep-UV optical lithography system) 
• Sputter deposition metallization 
• E-beam (CHA turbo-pumped four-hearth e-beam metal evaporator) 
• Thermal evaporation of metals and dielectrics 
• Reactive ion etching (Plasma-Therm) 
• Rapid-thermal heating systems (AG Associates) 
• Tencor Alpha-Step profilometer 
• Numerous furnace tubes 
• Laminar flow wet processing hoods 
• Wafer thinning and polishing equipment 
  

Characterization:

• Quantum efficiency, bandwidth to >50GHz, multiplication noise 
• High-speed (50 GHz) ocsilloscopes and spectrum analyzers (50 GHz) 
• I-V and C-V measurement systems (HP 4145B Semiconductor Parameter Analyzer and capacitance bridge) 
• High-frequency network analyzer ( HP 8510B) 
• Noise Figure Meter (HP 8970B) 
• Digitizing Signal Analyze (Tektronix 11801) 
• Various probe stations 
• Pulsed and CW semiconductor laser driver current sources 
• Spectrometers 
• Coherent mode-locked Ti-sapphire laser with Regenerative Amplifier and Optical Parametric
• Oscillator (200 fs pulses from 500 nm to 2200 nm) 
• Variable-temperature, light-vs-current measurement systems 
• Varian Gen II molecular beam epitaxial systems: Arsenides, Phosphides, and Nitrides; also MOCVD

Characterization Laboratories 

• Electrical I-V and C-V measurements 
• Temperature-dependent Hall effect, DLTS 
• Magneto-transport measurements (9T, 4-500K) 
• XRD, FTIR, temperature-dependent PL 
• AFM, SEM, lattice imaging TEM 
• R-f and microwave characterization 
• NSF nano-characterization facility

Extensive network of PC’s and workstations with commercial and in-house device/process simulators; access to Cray Y-MP machines