Silicon Processing Equipment

• Oxidation/diffusion furnaces (4-stack, 6" capability) 
• LPCVD for poly, oxides, & nitrides (4-stack, 6") 
• Oxidation/diffusion furnaces for high-K dielectrics, SiGe (6-stack, 4" capability) 
• LPCVD for poly, oxides, & nitrides for high-K dielectrics, SiGe (3-stack, 4") 
• RTP systems for RTA, RTO/RTN, RTPCVD of high-K dielectrics
• Karl Suss split field contact lithography (~0.5 micron) 
• JEOL 6000 electron beam lithography 
• Aluminum and silicide sputter deposition 
• Reactive-ion etching of poly, oxides/nitrides 
• Wet chemistry stations for cleans, etches for Si, SiGe, high-K dielectrics, metals 
• SiGeC-heteroepitaxy: UHVCVD, RPCVD, RTPCVD