ALD Fiji w/ remote plasma & ozone generator

Silicon Metals

North Cleanroom

1.756

A training video for how to do ALD deposition using a Fiji ALD:

low- to mid-temperature (100-250 C) deposition system.

Up to 8” wafer.

Precursors:

Trimethylaluminun,

Tetrakis-dimethylamino Hafnium,

tris dimethylamino Silane,

Platinum,

Nitride amedinate

lead to the following films:

Al₂O₃, HfO₂ , NiO, Ni, TiN and SiO₂.

Catalyst precursor: water

Carrier Gas: Ar

Special featuress:

- Ar booster for Amedinate precursor line

- Ozone generator

Remote plasma: _{NH3, O2, Ar, N2, H2, CF4}

NH3, O2, Ar, N2, H2, CF4

Compatible Materials:

CMOS compatible

Incompatible Materials:

Photo Resist, Gold, Copper

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