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ALD Fiji w/ remote plasma & ozone generator

Equipment Type: 
Silicon Metals
Equipment Area: 
North Cleanroom
Equipment Location: 
1.756
Description: 

Atomic Layer Deposition

low- to mid-temperature (100-250 C) deposition system.
Up to 8” wafer.
Precursors:
Trimethylaluminun,
Tetrakis-dimethylamino Hafnium,
tris dimethylamino Silane,
TDMA-Titanium,
Nitride amedinate
lead to the following films:
Al2O3, HfO2 , NiO, Ni, TiN and SiO2.
Catalyst precursor: water
Carrier Gas: Ar
Special featuress:
- Ar booster for Amedinate precursor line
- Ozone generator
Remote plasma: NH3, O2, Ar, N2, H2, CF4
Gases: 
NH3, O2, Ar, N2, H2, CF4
Compatible Materials: 
CMOS compatible
Incompatible Materials: 
Photo Resist, Gold, Copper