In this research, Kulkarni, the principal investigator along with his collaborator from Vanderbilt University Prof. Bharat Bhuva, plans to explore novel Phase Transition Materials (PTM) to improve the radiation hardness of CMOS logic and memory circuits.
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The grant is part of a $7.5 million initiative by the DOE to support the research and development of innovative designs that will strengthen the resilience of the U.S. power grid.
Prof. Huang was chosen for demonstrating “a highly prolific spirit of innovation in creating or facilitating outstanding inventions that have made a tangible impact on the quality of life, economic development and welfare of society.”
The research proposes "novel SRAM technology aimed at decoupling the conflicting low leakage power and low supply voltage design requirement using emerging nano-devices such as memristor and selector switches."
Texas ECE student Otitoaleke Akinola won the Best Poster Award at the Inaugural TACC Symposium for Texas Researchers. Akinola, a nanoelectronics researcher and Ph.D.